Compact modeling of BJT self-heating in SPICE
نویسندگان
چکیده
Self-heating effects in bipolar junction transistors have been incorporated into PSpice dc and ac analyses. The effects are intrinsic to the operation of the transistor, and are treated within the device model, avoiding the need for thermal subcircuits. A physical thermal impedance model is provided, which allows prediction of thermal impedance for devices with rectangular emitters from device geometry. A simple approximation is used to predict thermal frequency response. The predictive model can be overridden by measured thermal model parameters. The modifications made to the PSpice code are presented, along with some discussion of implementation alternatives. An example simulation is presented demonstrating the significance of thermal effects in a typical circuit. Run-time comparisons show the modified code is about half the speed of unmodified PSpice, mostly because of slower convergence. It is likely that this performance can be improved with suggested implementation changes.
منابع مشابه
Kharkov National University of Radioelectronics
The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.
متن کاملTemperature Dependence of Dc Currents in Hbt
A DC thermal-electrical HBT model is presented in this paper. Only three parameters were needed to simulate completely an HBT with the self-heating effect, and it can be very easily implemented in any CAD softwares which use the SPICE BJT model. Parameter extractions have been carried out on several measured data and goodfittings were obtained over a wide temperature range. This model is ready ...
متن کاملHeating and Transit Time Effects
Absrmct-A physically based, large signal HBT model is presented to account for the time dependence of the base, collector, and emitter charging currents, as well as self heating effects. The model tracks device performance over eight decades of current. As such, the model can be used as the basis of SPICE modeling approximations, and to this end, examples are presented. A thesis for the diverge...
متن کاملSelf-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)
We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...
متن کاملINTEGRATED CIRCUIT DEVICE MISMATCH MODELING AND CHARACTERIZATION FOR ANALOG CIRCUIT DESIGN by
This work presents a new method for the modeling and characterization of resistor, MOSFET and bipolar transistor mismatch for analog circuit design. For transistors, sensitivities numerically calculated from SPICE models were used to infer mismatch variances in process parameters, such as sheet resistance and geometry variation, from electrical parameter mismatch variances, such as collector cu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IEEE Trans. on CAD of Integrated Circuits and Systems
دوره 12 شماره
صفحات -
تاریخ انتشار 1993